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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
* 650V @TJ = 150C * Typ. RDS(on) = 0.32 * Fast Recovery Type ( trr = 120ns) * Ultra Low Gate Charge (typ. Qg = 40nC) * Low Effective Output Capacitance (typ. Cosseff.=95pF) * 100% avalanche tested
TM
Description
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
!
"
G! GDS
!"
" "
TO-220
GD S
TO-220F
!
S
Absolute Maximum Ratings
Symbol
ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FCP11N60F
11 7 33 30
(Note 2) (Note 1) (Note 1) (Note 3)
FCPF11N60F
11 * 7* 33 *
Units
A A A V
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
340 11 12.5 4.5 125 1.0 -55 to +150 300 36 * 0.29 *
mJ A mJ V/ns W W/C C C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
FCP11N60F
1.0 0.5 62.5
FCPF11N60F
3.5 -62.5
Units
C/W C/W C/W
(c)2005 Fairchild Semiconductor Corporation
1
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FCP11N60F/FCPF11N60F Rev. A
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCP11N60F FCPF11N60F
Device
FCP11N60F FCPF11N60F
Package
TO-220 TO-220F
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Test Conditions
VGS = 0 V, ID = 250 A, TJ = 25C VGS = 0 V, ID = 250 A, TJ = 150C ID = 250 A, Referenced to 25C VGS = 0 V, ID = 11 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min.
600 --------
Typ.
-650 0.6 700 -----
Max.
----10 100 100 -100
Units
V V V/C V A A nA nA
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.32 9.7 5.0 0.38 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V VDD = 300 V, ID = 11 A, RG = 25 -----1148 671 63 35 95 1490 870 82 --pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 11 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
--------
34 98 119 56 40 7.2 21
80 205 250 120 52 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 11 A VGS = 0 V, IS = 11 A, dIF / dt = 100 A/s
(Note 4)
------
---120 0.8
11 33 1.4 ---
A A V ns C
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
2 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
10
1
ID , Drain Current [A]
10
1
150 C
o
10
0
10
0
25 C
o
-55 C
o
10
-1
* Notes : 1. 250 s Pulse Test o 2. TC = 25 C
* Note 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1.0
0.8
IDR , Reverse Drain Current [A]
RDS(ON) [], Drain-Source On-Resistance
VGS = 10V
0.6
10
1
0.4
VGS = 20V
10
0
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250 s Pulse Test
o
0.2
* Note : TJ = 25 C
o
0.0 0 5 10 15 20 25 30 35 40
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
5000
10
VDS = 250V VDS = 400V
Capacitance [pF]
4000
8
Coss
3000
* Notes : 1. VGS = 0 V 2. f = 1 MHz
6
2000
Ciss
4
1000
Crss
2
* Note : ID = 11A
0 -1 10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 5.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Safe Operating Area for FCP11N60F
Figure 9-2. Safe Operating Area for FCPF11N60F
10
2
Operation in This Area is Limited by R DS(on)
10
2
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms 10 ms
10
0
ID, Drain Current [A]
10
1
100 us
10
1
100 us 1 ms 10 ms
DC
10
0
100 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
12.5
10.0
ID, Drain Current [A]
7.5
5.0
2.5
0.0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
4 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP11N60F
10
0
D = 0 .5
ZJC(t), Thermal Response
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
* N o te s : o 1 . Z J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF11N60F
D = 0 .5
10
0
ZJC(t), Thermal Response
0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
* N o te s : o 1 . Z J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
s in g le p u ls e
10
-2
PDM t1 t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
5 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
6 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
7 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
8 FCP11N60F/FCPF11N60F Rev. A
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
9 FCP11N60F/FCPF11N60F Rev. A
15.87 0.20
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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
10 FCP11N60F/FCPF11N60F Rev. A
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